UPA901TU nec's npn sige rf ic in a 8-pin lead-less minimold california eastern laboratories ? output power: p out = 19 dbm @ p in = ? 3 dbm, v ce = 3.6 v, f = 5.8 ghz ? low power: i c = 90 ma @ p in = ? 3 dbm, v ce = 3.6 v, f = 5.8 ghz ? single power supply operation: v ce = 3.6 v ? built-in bias circuit ? 8-pin lea d-less minimold : (2.0 2.2 0.5 mm) features data sheet ordering information remark to order evaluation samples, contact your nearby sales of?ce. the unit sample quantity is 50 pcs. nec's UPA901TU is a silicon germanium hbt ic designed for the power ampli?er of 5.8 ghz cordless phone and other 5.8 ghz applications. this ic consists of two stage ampli?ers and has excellent performance, high ef?ciency, high gain, low power consumption. nec's UPA901TU is packaged in surface mount 8-pin lead- less minimold plastic package. this device is fabricated with our sige hbt process uhs2- hv technology. description ? 5.8 ghz cordless phones ? 5.8 ghz band dsrc (dedicated short range communication) system ? 5 ghz band video tra nsmitter applications part number order number quantity package marking supplying form UPA901TU UPA901TU-a 50 pcs (non reel) 8-pin lead-less minimold( pb-free) a901 ? 8 mm wide embossed taping ? pin 1, pin 8 face the perforation side of the tape UPA901TU-t3 UPA901TU-t3-a 5 kpcs/reel
UPA901TU pin connections and internal block diagram absolute maximum ratings (t a =+25oc) recommended operating range ( a ll parameters ) (t op v iew) 5 6 7 8 4 3 2 1 (n.c.) (b1) (e) (c2) q2 q1 bias circuit (b2) (c1) (e) (bias) parameter symbol ratings unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 4.5 v emitter to base voltage v ebo 2 v collector current of q1 i c1 75 ma collector current of q2 i c2 250 ma bias current i bias 25 ma total power dissipation p tot note 410 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c operating ambient temperature t a ? 40 to +85 c note mounted on 20 20 0.8 mm (t) glass epoxy pcb (fr-4) parameter symbol min. typ. max. unit collector to emitter voltage v ce ? 3.6 4.5 v total current i total ? 90 300 ma input power p in ? ? 3 +5 dbm t hermal resistance (t a =+25oc) parameter symbol test conditions ratings unit channel to ambient resistance r th (j-a1) note 150 c/w r th (j-a2) free air tbd c/w note mounted on 20 20 0.8 mm (t) glass epoxy pcb (fr-4)
UPA901TU electrical characteristics (t a = +25 c ) -dc characteristics- (1) q1 parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v cb = 5 v, i e = 0 ma ? ? 60 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ma ? ? 120 na dc current gain h fe note v ce = 3 v, i c = 6 ma 80 120 160 ? current ratio (i c (set) 1 /i bias ) cr1 v ce = 3.6 v, v be = v bias = 0.865 v 2 4.5 9 ? (2) q2 parameter symbol test conditions min. typ. max. unit collector cut-off current i cbo v cb = 5 v, i e = 0 ma ? ? 200 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ma ? ? 400 na dc current gain h fe note v ce = 3 v, i c = 20 ma 80 120 160 ? current ratio (i c (set) 2 /i bias ) cr2 v ce = 3.6 v, v be = v bias = 0.865 v 8 10 13 ? (3) bias circuit parameter symbol test conditions min. typ. max. unit bias circuit current i bias v bias = 0.865 v ? 4 ? ma note pulse measurement: pw 350 s, duty cycle 2% i bias , i c (set) 1 , i c (set) 2 measurement circuit (n.c.) (b1) (e) (c2) q2 q1 bias circuit (b2) (c1) (e) (bias) v bias i bias 1 2 3 4 8 7 6 5 (n.c.) (b1) (e) (c2) q2 q1 bias circuit (b2) (c1) (e) (bias) v ce i c (set) 1 1 2 3 4 8 7 6 5 v be (n.c.) (b1) (e) (c2) q2 q1 bias circuit (b2) (c1) (e) (bias) i c (set) 2 1 2 3 4 8 7 6 5 v be v ce i bias i c (set) 1 i c (set) 2 i c (set) 1 = cr 1 i bias = 4.5 i bias (typ.) i c (set) 2 = cr2 i bias = 4.5 i bias (typ.) the application circuits and their parameters are for reference only and are not intended for actual design-ins.
UPA901TU electrical characteristics (t a = +25 c ) -rf characteristics- (1) q1 parameter symbol test conditions min. typ. max. unit insertion power gain (q1) | s 21e | 2 v ce = 3.6 v, i c = 12 ma, f = 5.8 ghz 8.5 10.0 11.5 db maximum available power gain (q1) mag1 v ce = 3.6 v, i c = 12 ma, f = 5.8 ghz 13.5 15.0 ? db output power (q1) p out 1 v ce = 3.6 v, i c (set) = 12 ma, f = 5.8 ghz, p in = ? 3 dbm 10.2 11.2 ? dbm collector current (q1) i cc 1 v ce = 3.6 v, i c (set) = 12 ma, f = 5.8 ghz, p in = ? 3 dbm ? 20 ? ma (2) q2 parameter symbol test conditions min. typ. max. unit insertion power gain (q2) | s 21e | 2 v ce = 3.6 v, i c = 40 ma, f = 5.8 ghz 2 3.5 5 db maximum available power gain (q2) mag2 v ce = 3.6 v, i c = 40 ma, f = 5.8 ghz 8.5 10.0 10.5 db output power (q2) p out 2 v ce = 3.6 v, i c (set) = 40 ma, f = 5.8 ghz, p in = 11 dbm 17.5 19.0 ? dbm collector current (q2) i cc 2 v ce = 3.6 v, i c (set) = 40 ma, f = 5.8 ghz, p in = 11 dbm ? 70 ? ma (3) q1 + q2, 2 stage ampli?ers parameter symbol test conditions min. typ. max. unit output power (q1 + q2) p out v ce = 3.6 v, r bias = 680 , f = 5.8 ghz, p in = ? 3 dbm note 17.5 19.0 ? dbm total current (q1 + q2) i total v ce = 3.6 v, r bias = 680 , f = 5.8 ghz, p in = ? 3 dbm note ? 90 ? ma note by measurement circuit 1
UPA901TU measurement circuit 1 (n.c.) (b1) (e) (c2) q2 q1 bias circuit (b2) (c1) (e) (bias) 1 2 3 4 8 7 6 5 100 nh l1 rf in 10 ? 1.0 pf c9 r3 0.75 pf c1 0.5 pf c2 0.5 pf c3 1.0 pf c4 5.6 nh l2 rf out r4 10 ? 10 nf 1.0 pf c6 c10 r1 v ce i tota l r5 10 ? 10 nf 12 nh l4 5.6 nh l3 0.75 pf c5 r2 10 ? 1.0 pf 1.0 pf c5 c8 c7 680 ? i c2 , i c (set) 2 i bias i c1 , i c (set) 1 i c (set) 1 = cr1 i bias = 4.5 i bias (typ.) i c (set) 2 = cr2 i bias = 4.5 i bias (typ.) the application circuits and their parameters are for reference only and are not intended for actual design-ins.
UPA901TU illustration of the test circuit assembled on evaluation board c1 c2 c3 c4 c10 c9 r4 r3 c6 l1 l2 c5 c7 c8 r1 r2 c1 1 r5 l3 l4 v cc gnd r : 1005 chip resistor l : 1005 chip inductor c : 1005 chip cunductor rf in rf out a901 the dotted line are connected with the back of substrate remarks 1. substrate : 20 20 0.8 (t) mm fr-4 (4 layer, each thickness 0.2 mm), copper thickness 18 m, gold ?ash plating 2. back side : gnd pattern 3. o : through hole using the nec evaluation board symbol values symbol values r1 680 c2 0.5 pf r2 10 c3 0.5 pf r3 10 c4 1.0 pf r4 10 c5 0.75 pf r5 10 c6 1.0 pf l1 100 nh c7 1.0 pf l2 5.6 nh c8 1.0 pf l3 5.6 nh c9 1.0 pf l4 12 nh c10 10 nf c1 0.75 pf c11 10 nf
UPA901TU typical characteristics (t a = +25 c , v ce = 3.6 v, r bias = 680 , f = 5.8 ghz, unless otherwise speci?ed) output power p out (dbm) input power p in (dbm) 25 20 15 10 5 -15 -5 5 -10 0 200 150 100 50 0 i tota l p out tota l v ce x i tota l tota l = x 100 (% ) p out output power p out (dbm) input power p in (dbm) 24 22 20 18 16 14 12 10 -10 -2 t otal current i total (ma) -8 6 28 0 24 0 200 16 0 120 80 40 0 -6 -4 0 2 4 v ce = 4.2 v 3.8 v 3.6 v 3.3 v 2.8 v 4.2 v 3.8 v 3.6 v 3.3 v 2.8 v i tota l p out 24 22 20 18 16 14 12 10 -10 -2 -8 6 28 0 24 0 200 16 0 120 80 40 0 -6 -4 0 2 4 f = 5.725 ghz 5.800 ghz 5.850 ghz i tota l p out bias circuit current i bias (ma) collector to emitter v oltage v ce (v) 15 10 5 0 0 4 1 2 3 5 r bias = 300 ? 680 ? 1000 ? 2000 ? output power, total curren t, total power efficienc y vs. input powe r t otal current i total (ma) t otal power ef ficiency total (% ) output power, total curren t, vs. input powe r output power p out (dbm) input power p in (dbm) t otal current i total (ma) output power, total curren t, vs. input powe r bias circuit curren t vs. collecto r to emitter vo lt ag e remark the graphs indicate nominal characteristics.
life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury . the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec compound semiconductor devices, ltd. 02/15/2005 UPA901TU package dimensions 8-pin lead-less minimold (unit:mm) 1 2 3 4 8 7 6 5 2.20.05 2.00.1 (t op v iew) 0.50.03 4 3 2 1 5 6 7 8 0.40.1 0.40.1 (1.4) (0.75) (0.75) (0.25) (0.25) 0.160.05 (bottom v iew) a901 2.00.1 (0.35) (0.35) (0.35) (0.35) (0.5) (0.5) (0.6) (0.6) (0.65) (0.65) (0.6) (0.3) 0.125 +0.1 -0.0 5 remark ( ) : reference value
4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408 ) 9 19-250 0 facsimile : ( 40 8 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substance s i n electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix Ca indicates that the device is pb-free. the Caz suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cels understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information . restricted substanc e per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -a z lead (p b) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmiu m < 100 ppm not detected hexavalent chromiu m < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: informatio n p rovided by ce l o n its website or in other communications concertin g the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its know ledge and belief on informatio n provided by thir d p arties and makes no representation or warrant y as to the accura cy of such information. efforts are underw ay to better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but ma y not have conducted destructive testing or chemical analysis on incoming ma terials and chemicals. cel and ce l suppliers consider certain information to be propri etar y, and thus cas numbers and other limited information may not be availabl e for release . in no event shall cels liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of wa rranties and liabilit y.
|
